Invention Grant
- Patent Title: SOI substrate contact with extended silicide area
- Patent Title (中): SOI衬底与延长的硅化物区域接触
-
Application No.: US12613631Application Date: 2009-11-06
-
Publication No.: US07939896B2Publication Date: 2011-05-10
- Inventor: Dinh Dang , Thai Doan , Jessica Anne Levy , Max Gerald Levy , Alan Frederick Norris , James Albert Slinkman
- Applicant: Dinh Dang , Thai Doan , Jessica Anne Levy , Max Gerald Levy , Alan Frederick Norris , James Albert Slinkman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent David Cain
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.
Public/Granted literature
- US20100084736A1 SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA Public/Granted day:2010-04-08
Information query
IPC分类:
