发明授权
US07940581B2 Method for low power sensing in a multi-port SRAM using pre-discharged bit lines
有权
使用预放电位线的多端口SRAM中的低功率感测方法
- 专利标题： Method for low power sensing in a multi-port SRAM using pre-discharged bit lines
- 专利标题（中）： 使用预放电位线的多端口SRAM中的低功率感测方法
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申请号： US12861026申请日： 2010-08-23
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公开(公告)号： US07940581B2公开(公告)日： 2011-05-10
- 发明人: Igor Arsovski , Michael T. Fragano , Robert M. Houle
- 申请人： Igor Arsovski , Michael T. Fragano , Robert M. Houle
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Michael LeStrange
- 主分类号： G11C7/06
- IPC分类号： G11C7/06
摘要：
A method for sensing the contents of a memory cell within a static random access memory (SRAM) includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; energizing the bit line to a first voltage potential different than the zero voltage potential during an access of the memory cell; and sensing the memory cell contents when the associated bit line has reached the first voltage potential.
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