发明授权
- 专利标题: Thin-film magnetic head structure, method of manufacturing the same, and thin-film magnetic head
- 专利标题(中): 薄膜磁头结构及其制造方法以及薄膜磁头
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申请号: US12232722申请日: 2008-09-23
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公开(公告)号: US07943288B2公开(公告)日: 2011-05-17
- 发明人: Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
- 申请人: Yoshitaka Sasaki , Hiroyuki Ito , Takehiro Kamigama , Tatsushi Shimizu , Hironori Araki , Shigeki Tanemura , Kazuo Ishizaki
- 申请人地址: US CA Milpitas CN Hong Kong
- 专利权人: Headway Technologies, Inc.,SAE Magnetics (H.K.) Ltd.
- 当前专利权人: Headway Technologies, Inc.,SAE Magnetics (H.K.) Ltd.
- 当前专利权人地址: US CA Milpitas CN Hong Kong
- 代理机构: Oliff & Berridge, PLC
- 主分类号: G11B5/31
- IPC分类号: G11B5/31
摘要:
A method of manufacturing a thin-film magnetic head structure comprises the steps of preparing an insulating layer 10; forming a first resist layer 51 provided with a first slit pattern 51a corresponding to a very narrow groove part and a second slit pattern 51b corresponding to a temporary groove part integrally extending from the very narrow groove part along outer edges of a main depression onto the insulating layer 10; etching the insulating layer 10 while using the first resist layer 51 as a mask; eliminating the first resist layer 51; forming a second resist layer having an opening pattern corresponding to the main depression onto the insulating layer 10; and etching the insulating layer 10 while using the second resist layer as a mask.
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