发明授权
- 专利标题: Semiconductor device with heat sink and method for manufacturing the same
- 专利标题(中): 具有散热器的半导体器件及其制造方法
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申请号: US12170482申请日: 2008-07-10
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公开(公告)号: US07943430B2公开(公告)日: 2011-05-17
- 发明人: Kuan-Chun Chen
- 申请人: Kuan-Chun Chen
- 申请人地址: TW Taichung Hsien
- 专利权人: Kuan-Chun Chen
- 当前专利权人: Kuan-Chun Chen
- 当前专利权人地址: TW Taichung Hsien
- 代理机构: Thomas, Kayden, Horstemeyer & Risley, LLP
- 优先权: TW96126709A 20070720
- 主分类号: H01L23/36
- IPC分类号: H01L23/36 ; H01L23/367
摘要:
A semiconductor device and a method for manufacturing the same are described. The semiconductor device comprises: a heat sink having at least one opening passing through the heat sink; at least one semiconductor chip disposed in the opening, wherein the semiconductor chip includes a first side and a second side on opposite sides; an electricity conducting thin film filling in a first depth portion of the opening, wherein the second side of the semiconductor chip is embedded in the electricity conducting thin film; a heat conducting thick film filling in a second depth portion of the opening, wherein the electricity conducting thin film is directly connected with the heat conducting thick film; at least one wire electrically connecting the semiconductor chip and an external circuit; and an encapsulant covering a portion of the heat sink, the semiconductor chip, the wire and an exposed portion of the electricity conducting thin film.
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