Invention Grant
- Patent Title: Fabrication method of thin film device
- Patent Title (中): 薄膜器件制造方法
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Application No.: US12503004Application Date: 2009-07-14
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Publication No.: US07943440B2Publication Date: 2011-05-17
- Inventor: Sang Jin Kim , Yongsoo Oh , Hwan-Soo Lee
- Applicant: Sang Jin Kim , Yongsoo Oh , Hwan-Soo Lee
- Applicant Address: KR Suwon, Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon, Gyunggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2008-0126015 20081211
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/50
Abstract:
A method for fabricating a thin film device includes the step of forming a sacrificial layer on a first substrate. A portion other than a region of the sacrificial layer is selectively removed. A material film is formed on the sacrificial layer to be connected to the first substrate via the selectively removed region. The material film portion filled in the selectively removed region is provided as an anchor. A thin film lamination is formed on the material film. The desired thin film device is formed by using a selective etching process. After removing the sacrificial layer, the thin film device floats over the first substrate with being supported by the anchor. A support body is temporarily attached on the thin film lamination. The thin film device is transferred to the support body onto a second substrate.
Public/Granted literature
- US20100151627A1 FABRICATION METHOD OF THIN FILM DEVICE Public/Granted day:2010-06-17
Information query
IPC分类:
