Invention Grant
US07943453B2 CMOS devices with different metals in gate electrodes using spin on low-k material as hard mask
有权
具有不同金属的CMOS器件，在栅极上使用低k材料作为硬掩模
- Patent Title: CMOS devices with different metals in gate electrodes using spin on low-k material as hard mask
- Patent Title (中): 具有不同金属的CMOS器件，在栅极上使用低k材料作为硬掩模
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Application No.: US11960881Application Date: 2007-12-20
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Publication No.: US07943453B2Publication Date: 2011-05-17
- Inventor: Bernd Ernst Eduard Kastenmeier , Byoung Hun Lee , Naim Moumen , Theodorus Eduardus Standaert
- Applicant: Bernd Ernst Eduard Kastenmeier , Byoung Hun Lee , Naim Moumen , Theodorus Eduardus Standaert
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Anthony J. Canale
- Main IPC: H01L21/8238
- IPC: H01L21/8238
Abstract:
A semiconductor structure and a method of forming the same. The semiconductor structure includes a semiconductor substrate, a gate dielectric layer on top of the semiconductor substrate. The structure also includes a first metal containing region on top of the gate dielectric layer. The structure also includes a second metal containing region on top of the gate dielectric layer wherein the first and second metal containing regions are in direct physical contact with each other. The structure further includes a gate electrode layer on top of both the first and second metal containing regions and the gate electrode layer is in direct physical contact with both the first and second metal containing regions. The structure further includes a patterned photoresist layer on top of the gate electrode layer.
Public/Granted literature
- US20090159991A1 CMOS DEVICES WITH DIFFERENT METALS IN GATE ELECTRODES USING SPIN ON LOW-K MATERIAL AS HARD MASK Public/Granted day:2009-06-25
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