发明授权
- 专利标题： EDRAM including metal plates
- 专利标题（中）： EDRAM包括金属板
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申请号： US12391631申请日： 2009-02-24
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公开(公告)号： US07943474B2公开(公告)日： 2011-05-17
- 发明人: Thomas W. Dyer , Keith Kwong Hon Wong , Mahender Kumar
- 申请人： Thomas W. Dyer , Keith Kwong Hon Wong , Mahender Kumar
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnumann
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for forming a memory device is provided by first forming at least one trench in a semiconductor substrate. Next, a lower electrode is formed in the at least one trench, and thereafter a conformal dielectric layer is formed on the lower electrode.An upper electrode is then formed on the conformal dielectric layer. The forming of the upper electrode may include a conformal deposition of metal nitride layer, and a non-conformal deposition of an electrically conductive material atop the metal nitride layer, in which the electrically conductive material encloses the at least one trench.
公开/授权文献
- US20100213571A1 EDRAM INCLUDING METAL PLATES 公开/授权日：2010-08-26