发明授权
- 专利标题： Semiconductor device manufacturing method
- 专利标题（中）： 半导体器件制造方法
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申请号： US12541457申请日： 2009-08-14
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公开(公告)号： US07943478B2公开(公告)日： 2011-05-17
- 发明人: Haruhiko Koyama , Mitsuhiro Noguchi , Minori Kajimoto
- 申请人： Haruhiko Koyama , Mitsuhiro Noguchi , Minori Kajimoto
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2005-288567 20050930
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
In a semiconductor device manufacturing method, a surface of a substrate structure including a semiconductor layer is covered with a first film including first and second openings. The first opening is configured as an alignment mark. The second opening is configured as an opening for introducing an impurity into a first predetermined position of the semiconductor layer. In this method, a third opening is formed in the first film, using a photo mask aligned with the first opening used as an alignment mark. The third opening is configured as an opening for introducing an impurity into a second predetermined position of the semiconductor layer.
公开/授权文献
- US20090298254A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 公开/授权日：2009-12-03