发明授权
US07943482B2 Method for semiconductor device having radiation hardened insulators and design structure thereof
有权
具有辐射硬化绝缘体的半导体器件及其设计结构的方法
- 专利标题: Method for semiconductor device having radiation hardened insulators and design structure thereof
- 专利标题(中): 具有辐射硬化绝缘体的半导体器件及其设计结构的方法
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申请号: US12186762申请日: 2008-08-06
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公开(公告)号: US07943482B2公开(公告)日: 2011-05-17
- 发明人: John M. Aitken , Ethan H. Cannon
- 申请人: John M. Aitken , Ethan H. Cannon
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Richard Kotulak
- 主分类号: H01L21/76
- IPC分类号: H01L21/76 ; G06F17/50
摘要:
A design structure is provided for a semiconductor device having radiation hardened buried insulators and isolation insulators in SOI technology. The device includes a first structure and a second structure. The first structure includes: a radiation hardened BOX layer under an active device layer; radiation hardened shallow trench isolation (STI) structures between active regions of the active device layer and above the radiation hardened BOX layer; metal interconnects in one or more interlevel dielectric layers above gates structures of the active regions. The second structure is bonded to the first structure. The second structure includes: a Si based substrate; a BOX layer on the substrate; a Si layer with active regions on the BOX; oxide filled STI structures between the active regions of the Si layer; and metal interconnects in one or more interlevel dielectric layers above gates structures. At least one metal interconnect is electrically connecting the first structure to the second structure.