发明授权
- 专利标题： Plasma etching method and computer readable storage medium
- 专利标题（中）： 等离子体蚀刻方法和计算机可读存储介质
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申请号： US11677759申请日： 2007-02-22
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公开(公告)号： US07943523B2公开(公告)日： 2011-05-17
- 发明人: Shin Hirotsu , Wakako Naito , Yoshinori Suzuki
- 申请人： Shin Hirotsu , Wakako Naito , Yoshinori Suzuki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-052894 20060228
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
A plasma etching method for plasma-etching an anti-reflective coating formed on a target object includes the step of placing the target object into a processing chamber having a first electrode and a second electrode provided while facing each other, the target object including an etching target film, the anti-reflective coating and a patterned photoresist film sequentially formed in that order on a substrate. The plasma etching method further includes the steps of introducing a processing gas into the processing chamber; generating a plasma by applying a high frequency power to one of the first electrode and the second electrode; and applying a DC voltage to one of the first electrode and the second electrode.
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