发明授权
- 专利标题: Methods for forming a silicon oxide layer over a substrate
- 专利标题(中): 在衬底上形成氧化硅层的方法
-
申请号: US11876664申请日: 2007-10-22
-
公开(公告)号: US07943531B2公开(公告)日: 2011-05-17
- 发明人: Srinivas D. Nemani , Abhijit Basu Mallick , Ellie Y. Yieh
- 申请人: Srinivas D. Nemani , Abhijit Basu Mallick , Ellie Y. Yieh
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Kilpatrick Townsend and Stockton
- 主分类号: H01L21/469
- IPC分类号: H01L21/469
摘要:
A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH3 plasma are reacted to form a silicon oxide layer. The first silicon-containing precursor includes at least one of Si—H bond and Si—Si bond. The second silicon-containing precursor includes at least one Si—N bond. The deposited silicon oxide layer is annealed.