发明授权
- 专利标题: Resistive sense memory array with partial block update capability
- 专利标题(中): 具有部分块更新能力的电阻式存储阵列
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申请号: US12904653申请日: 2010-10-14
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公开(公告)号: US07944731B2公开(公告)日: 2011-05-17
- 发明人: Yiran Chen , Daniel S. Reed , Yong Lu , Harry Hongyue Liu , Hai Li
- 申请人: Yiran Chen , Daniel S. Reed , Yong Lu , Harry Hongyue Liu , Hai Li
- 申请人地址: US CA Scotts Valey
- 专利权人: Seagate Technology LLC
- 当前专利权人: Seagate Technology LLC
- 当前专利权人地址: US CA Scotts Valey
- 代理机构: Feller, Snider, et al.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Various embodiments of the present invention are generally directed to a method and apparatus for carrying out a partial block update operation upon a resistive sense memory (RSM) array, such as formed from STRAM or RRAM cells. The RSM array is arranged into multi-cell blocks (sectors), each block having a physical block address (PBA). A first set of user data is written to a selected block at a first PBA. A partial block update operation is performed by writing a second set of user data to a second block at a second PBA, the second set of user data updating a portion of the first set of user data in the first PBA. The first and second blocks are thereafter read to retrieve the second set of user data and a remaining portion of the first set of user data.
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