发明授权
- 专利标题: Semiconductor integrated circuit
- 专利标题(中): 半导体集成电路
-
申请号: US12169853申请日: 2008-07-09
-
公开(公告)号: US07945801B2公开(公告)日: 2011-05-17
- 发明人: Shigezumi Matsui , Takashi Sato , Kazuyuki Sakata , Tsuyoshi Yaguchi , Kenzo Kuwabara , Atsushi Nakamura , Motoo Suwa , Ryoichi Sano , Hisashi Shiota
- 申请人: Shigezumi Matsui , Takashi Sato , Kazuyuki Sakata , Tsuyoshi Yaguchi , Kenzo Kuwabara , Atsushi Nakamura , Motoo Suwa , Ryoichi Sano , Hisashi Shiota
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2003-310927 20030903
- 主分类号: H04L7/00
- IPC分类号: H04L7/00
摘要:
A memory interface circuit is connectable to a DDR-SDRAM which outputs read data in synchronization with a data strobe signal together with the data strobe signal. A clock generator generates internal clock signals and memory clock signals supplied to the DDR-SDRAM. The memory interface circuit determines a delay of arrival of the data strobe signal relative to the corresponding internal clock signal by using a data strobe signal inputted in a read cycle with respect to the DDR-SDRAM, samples the arrived read data, based on a signal obtained by shifting the phase of the arrived data strobe signal, and synchronizes the sampled read data to the corresponding internal clock signal on the basis of the result of determination of the arrival delay.
公开/授权文献
- US20080276112A1 SEMICONDUCTOR INTEGRATED CIRCUIT 公开/授权日:2008-11-06
信息查询