发明授权
- 专利标题： Atomic layer epitaxy processed insulation
- 专利标题（中）： 原子层外延加工绝缘
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申请号： US11823768申请日： 2007-06-28
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公开(公告)号： US07947128B2公开(公告)日： 2011-05-24
- 发明人: Douglas J. Conley
- 申请人： Douglas J. Conley
- 申请人地址： US FL Orlando
- 专利权人： Siemens Energy, Inc.
- 当前专利权人： Siemens Energy, Inc.
- 当前专利权人地址： US FL Orlando
- 主分类号： C30B21/04
- IPC分类号： C30B21/04
摘要：
In one embodiment the present invention provides for a method for depositing a thin film layer onto a composite tape 16, that comprises depositing at least one thin film layer of physically enhancing material 30 onto at least one portion of the composite tape. The depositing is accomplished by atomic layer epitaxy and the thin film layer is approximately 1-10 molecules thick.
公开/授权文献
- US20090000541A1 Atomic layer epitaxy processed insulation 公开/授权日：2009-01-01
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