发明授权
- 专利标题: Ion source apparatus and cleaning optimized method thereof
- 专利标题(中): 离子源装置及其清洗优化方法
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申请号: US10861758申请日: 2004-06-04
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公开(公告)号: US07947129B2公开(公告)日: 2011-05-24
- 发明人: Hirohiko Murata , Masateru Sato
- 申请人: Hirohiko Murata , Masateru Sato
- 申请人地址: JP
- 专利权人: SEN Corporation, an SHI and Axcelis Company
- 当前专利权人: SEN Corporation, an SHI and Axcelis Company
- 当前专利权人地址: JP
- 代理机构: Tarolli, Sundheim, Covell & Tummino LLP
- 优先权: JP2003-162763 20030606
- 主分类号: C25F3/00
- IPC分类号: C25F3/00
摘要:
An ion source apparatus includes a rare gas supply source supplying rare gas instead of ion source gas to a plasma chamber, means to determine time and timing for cleaning electrodes in consideration of a collecting amount of insulation layers accreting to the electrodes of an extraction electrode system. Based on the above, the ion source apparatus removes the insulation layers by sputtering with ion beam of the rare gas while adjusting extraction or accelerate voltage and supply amount of the rare gas as a setting parameter. Moreover, by adjusting the setting parameter which changes a diameter of ion beam based on the rare gas when the ion beam collides onto each electrode surface of the extraction electrode system, the beam diameter is focused within an effective range in which intension of the sputtering of the insulation layers is maximized thus evenly removing the insulation layers.
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