Structure and method for a CMOS device with doped conducting metal oxide as the gate electrode

Invention Grant

US07947588B2 Structure and method for a CMOS device with doped conducting metal oxide as the gate electrode 有权

Title translation: 具有掺杂导电金属氧化物作为栅电极的CMOS器件的结构和方法

Please log in to see more content

Patent Title: Structure and method for a CMOS device with doped conducting metal oxide as the gate electrode
Patent Title (中): 具有掺杂导电金属氧化物作为栅电极的CMOS器件的结构和方法
Application No.: US12424153

Application Date: 2009-04-15
Publication No.: US07947588B2

Publication Date: 2011-05-24
Inventor: Chen-Hua Yu , Cheng-Tung Lin , Hsiang-Yi Wang , Yung-Sheng Chiu , Chia-Lin Yu
Applicant: Chen-Hua Yu , Cheng-Tung Lin , Hsiang-Yi Wang , Yung-Sheng Chiu , Chia-Lin Yu
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Haynes and Boone, LLP
Main IPC: H01L21/4763
IPC: H01L21/4763

Structure and method for a CMOS device with doped conducting metal oxide as the gate electrode

Abstract:

A semiconductor device and method for fabricating a semiconductor device for providing improved work function values and thermal stability is disclosed. The semiconductor device comprises a semiconductor substrate; an interfacial dielectric layer over the semiconductor substrate; a high-k gate dielectric layer over the interfacial dielectric layer; and a doped-conducting metal oxide layer over the high-k gate dielectric layer.

Abstract(Chinese):

公开了一种用于制造用于提供改进的功函数值和热稳定性的半导体器件的半导体器件和方法。半导体器件包括半导体衬底; 半导体衬底上的界面介电层; 界面介电层上的高k栅介质层; 以及在高k栅极电介质层上方的掺杂导电金属氧化物层。

Public/Granted literature

US20100052066A1 STRUCTURE AND METHOD FOR A CMOS DEVICE WITH DOPED CONDUCTING METAL OXIDE AS THE GATE ELECTRODE Public/Granted day:2010-03-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）