Interconnection structure with low dielectric constant

Invention Grant

US07947594B2 Interconnection structure with low dielectric constant 有权

Title translation: 具有低介电常数的互连结构

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Patent Title: Interconnection structure with low dielectric constant
Patent Title (中): 具有低介电常数的互连结构
Application No.: US10571936

Application Date: 2004-09-15
Publication No.: US07947594B2

Publication Date: 2011-05-24
Inventor: Didier Louis
Applicant: Didier Louis
Applicant Address: FR Paris
Assignee: Commissariat a l'Energie Atomique
Current Assignee: Commissariat a l'Energie Atomique
Current Assignee Address: FR Paris
Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Priority: FR0350547 20030916
International Application: PCT/FR2004/050435 WO 20040915
International Announcement: WO2005/029577 WO 20050331
Main IPC: H01L21/4763
IPC: H01L21/4763

Interconnection structure with low dielectric constant

Abstract:

A method for producing an interconnection structure including at least one insulating layer having a low dielectric constant and at least one metal connection element coated with a support layer and capable of connecting to at least one conductive area of a microelectronic device. The interconnection structure has an improved low dielectric constant. The interconnection structures may be a metal interconnection structure in a variety of integrated circuits.

Abstract(Chinese):

一种用于制造互连结构的方法，所述互连结构包括至少一个具有低介电常数的绝缘层和至少一个涂覆有支撑层的金属连接元件并且能够连接到微电子器件的至少一个导电区域。互连结构具有改善的低介电常数。互连结构可以是各种集成电路中的金属互连结构。

Public/Granted literature

US20070087554A1 Interconnection structure with low dielectric constant Public/Granted day:2007-04-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）