Invention Grant
US07947971B2 Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
有权
量子阱MOSFET通道由金属源/漏极引起的单轴应变，以及保形再生长源/漏极
- Patent Title: Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
- Patent Title (中): 量子阱MOSFET通道由金属源/漏极引起的单轴应变，以及保形再生长源/漏极
-
Application No.: US12756989Application Date: 2010-04-08
-
Publication No.: US07947971B2Publication Date: 2011-05-24
- Inventor: Prashant Majhi , Mantu Hudait , Jack T. Kavalieros , Ravi Pillarisetty , Marko Radosavljevic , Gilbert Dewey , Titash Rakshit , Willman Tsai
- Applicant: Prashant Majhi , Mantu Hudait , Jack T. Kavalieros , Ravi Pillarisetty , Marko Radosavljevic , Gilbert Dewey , Titash Rakshit , Willman Tsai
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/072 ; H01L31/0336 ; H01L31/0328 ; H01L31/109
Abstract:
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
Public/Granted literature
Information query
IPC分类:
