Invention Grant
- Patent Title: Magnet-assisted transistor devices
- Patent Title (中): 磁铁辅助晶体管器件
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Application No.: US12193065Application Date: 2008-08-18
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Publication No.: US07948045B2Publication Date: 2011-05-24
- Inventor: Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
- Applicant: Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Fredrikson & Byron, P.A.
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/00 ; H01L21/336
Abstract:
A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.
Public/Granted literature
- US20100038735A1 MAGNET-ASSISTED TRANSISTOR DEVICES Public/Granted day:2010-02-18
Information query
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