Invention Grant
- Patent Title: Power gating circuit and integrated circuit including same
- Patent Title (中): 电源门控电路和集成电路包括相同
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Application No.: US12719472Application Date: 2010-03-08
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Publication No.: US07948263B2Publication Date: 2011-05-24
- Inventor: Hyung-Ock Kim , Jung-Yun Choi , Bong-Hyun Lee , Mun-Jun Seo , Youngsoo Shin
- Applicant: Hyung-Ock Kim , Jung-Yun Choi , Bong-Hyun Lee , Mun-Jun Seo , Youngsoo Shin
- Applicant Address: KR Gyeonggi-do KR Daejeong
- Assignee: Samsung Electronics Co., Ltd.,Korea Advanced Institute of Science and Technology
- Current Assignee: Samsung Electronics Co., Ltd.,Korea Advanced Institute of Science and Technology
- Current Assignee Address: KR Gyeonggi-do KR Daejeong
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2009-0021678 20090313
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/003

Abstract:
A power gating circuit includes a logic circuit, a switching element and a retention flip-flop. The logic circuit is coupled between a first power rail and a virtual power rail. The switching element selectively couples the virtual power rail to a second power rail in response to a mode control signal indicating an active mode or a standby mode. The retention flip-flop selectively performs a flip-flop operation or a data retention operation in response to a voltage of the virtual power rail.
Public/Granted literature
- US20100231255A1 Power Gating Circuit and Integrated Circuit Including Same Public/Granted day:2010-09-16
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