Invention Grant
- Patent Title: Drive circuit for semiconductor element
- Patent Title (中): 半导体元件驱动电路
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Application No.: US12294437Application Date: 2007-04-04
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Publication No.: US07948277B2Publication Date: 2011-05-24
- Inventor: Hiroshi Nakatake , Satoshi Ishibashi , Shinsuke Idenoue , Takeshi Oi , Shinichi Kinouchi , Takeshi Horiguchi
- Applicant: Hiroshi Nakatake , Satoshi Ishibashi , Shinsuke Idenoue , Takeshi Oi , Shinichi Kinouchi , Takeshi Horiguchi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-104907 20060406
- International Application: PCT/JP2007/057536 WO 20070404
- International Announcement: WO2007/116900 WO 20071018
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A drive circuit wherein any abnormality of a semiconductor element is prevented from being erroneously sensed in a case where a gate “ON” command has entered in a state in which a gate voltage of the semiconductor element has not lowered fully. A detection process for a controlled variable of the semiconductor element is permitted only within a period which corresponds to a controlled variable of the semiconductor element at the time when an “ON” signal has been inputted to a control circuit, and a detected controlled variable which is detected within the period and a comparison controlled variable which is set in correspondence with the controlled variable are compared so as to output an abnormality signal, whereby the semiconductor element is turn-off at a speed lower than in normal turn-off.
Public/Granted literature
- US20100231269A1 DRIVE CIRCUIT FOR SEMICONDUCTOR ELEMENT Public/Granted day:2010-09-16
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