发明授权
- 专利标题: Gain matching for electron multiplication imager
- 专利标题(中): 增益匹配电子倍增成像仪
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申请号: US12128890申请日: 2008-05-29
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公开(公告)号: US07948536B2公开(公告)日: 2011-05-24
- 发明人: John Robertson Tower , Peter Alan Levine
- 申请人: John Robertson Tower , Peter Alan Levine
- 申请人地址: US CA Menlo Park
- 专利权人: SRI International
- 当前专利权人: SRI International
- 当前专利权人地址: US CA Menlo Park
- 代理机构: Lowenstein Sandler PC
- 主分类号: H04N3/14
- IPC分类号: H04N3/14 ; H04N5/235
摘要:
A method and apparatus for equalizing gain in an array of electron multiplication (EM) pixels is disclosed, each pixel having one or more impact ionization gain stages with implants to achieve charge transfer directionality and comprising a phase 1 clocked gate, an EM clocked gate, and two DC gates formed between the phase 1 clocked gate and the EM clocked gate, comprising the steps of (a) applying initial voltages to each of the DC gates and the EM clocked gates of at least two pixels of a plurality of pixels; (b) clocking phase 1 clock gates and an EM clock gates associated with the at least two pixels of the plurality of pixels a predetermined number of times to achieve an average pixel intensity value after impact ionization gain; and (c) selectively adjusting the difference in voltage between the DC gate and corresponding EM clocked gate of the at least two pixels of the plurality of pixels until the difference between the resulting pixel intensity values and the average pixel intensity value needed to produce a desired uniform gain image is below a predetermined threshold.
公开/授权文献
- US20090295952A1 GAIN MATCHING FOR ELECTRON MULTIPLICATION IMAGER 公开/授权日:2009-12-03