Invention Grant
- Patent Title: Bit patterned medium
- Patent Title (中): 位图形介质
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Application No.: US12127390Application Date: 2008-05-27
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Publication No.: US07948700B2Publication Date: 2011-05-24
- Inventor: Hoo-san Lee , Sung-chul Lee , Hoon-sang Oh
- Applicant: Hoo-san Lee , Sung-chul Lee , Hoon-sang Oh
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2007-0087313 20070829
- Main IPC: G11B5/09
- IPC: G11B5/09

Abstract:
Provided is a bit patterned medium including bridges which induce exchange coupling between adjacent bits in order to reduce a switching field difference resulting from different magnetization directions of bits. The bridges and the bits are integrally formed with each other. The bits are locally connected by the bridges. A magnetostatic force for each bit is reduced due to an exchange coupling between adjacent bits, thereby reducing a switching field distribution of the bits.
Public/Granted literature
- US20090059429A1 BIT PATTERNED MEDIUM Public/Granted day:2009-03-05
Information query
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