发明授权
- 专利标题： Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory
- 专利标题（中）： 磁阻效应元件，磁头，磁记录/再现装置和磁存储器
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申请号： US11898079申请日： 2007-09-07
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公开(公告)号： US07948717B2公开(公告)日： 2011-05-24
- 发明人: Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
- 申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Nixon & Vanderhye, PC
- 优先权： JPP2006-243868 20060908
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A magneto-resistance effect element includes a first magnetic layer of which a magnetization direction is fixed; a second magnetic layer of which a magnetization direction is fixed; an intermediate layer which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes for flowing a current perpendicular to a film surface of the resultant laminated body comprised of the first magnetic layer, the second magnetic layer and the intermediate layer. The intermediate layer includes insulating portions and metallic portions containing at least one selected from the group consisting of Fe, Co, Ni, Cr and the metallic portions are contacted with the first magnetic layer and the second magnetic layer.