发明授权
- 专利标题: Semiconductor laser and optical integrated semiconductor device
- 专利标题(中): 半导体激光器和光学集成半导体器件
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申请号: US12435562申请日: 2009-05-05
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公开(公告)号: US07949020B2公开(公告)日: 2011-05-24
- 发明人: Takashi Kato
- 申请人: Takashi Kato
- 申请人地址: JP Osaka
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Smith, GAmbrell & Russell, LLP
- 优先权: JP2008-141207 20080529
- 主分类号: H01S3/10
- IPC分类号: H01S3/10
摘要:
A tunable distributed feedback semiconductor laser includes a substrate; an optical waveguide structure disposed on a main surface of the substrate and including an active layer and a diffraction grating, the optical waveguide structure being divided into a first DFB portion, a wavelength-tuning region, and a second DFB portion in that order; a first electrode for injecting carriers into the active layer in the first DFB portion; a second electrode for injecting carriers into the active layer in the second DFB portion; and a third electrode for supplying a wavelength tuning signal to the wavelength-tuning region. The diffraction grating extends over the first DFB portion, the wavelength-tuning region, and the second DFB portion. An optical confinement factor of the wavelength-tuning region is smaller than that of the first and second DFB portions.
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