Invention Grant
- Patent Title: Sputtering target and method for finishing surface of such target
- Patent Title (中): 这种靶材的表面抛光目标和方法
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Application No.: US10566301Application Date: 2004-08-24
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Publication No.: US07951275B2Publication Date: 2011-05-31
- Inventor: Shiro Tsukamoto
- Applicant: Shiro Tsukamoto
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2003-321050 20030912
- International Application: PCT/JP2004/012083 WO 20040824
- International Announcement: WO2005/026407 WO 20050324
- Main IPC: C23C14/06
- IPC: C23C14/06
Abstract:
Provided is a hollow cathode sputtering target comprising an inner bottom face having a surface roughness of Ra≦1.0 μm, and preferably Ra≦0.5 μm. This hollow cathode sputtering target has superior sputter film evenness (uniformity), generates few arcing and particles, is capable of suppressing the peeling of the redeposited film on the bottom face, and has superior deposition characteristics.
Public/Granted literature
- US20070108046A1 Sputtering target and method for finishing surface of such target Public/Granted day:2007-05-17
Information query
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