发明授权
US07951658B2 Method for manufacturing diode-connected transistor and image display device using the same
有权
二极管连接晶体管的制造方法及使用其的图像显示装置
- 专利标题: Method for manufacturing diode-connected transistor and image display device using the same
- 专利标题(中): 二极管连接晶体管的制造方法及使用其的图像显示装置
-
申请号: US12566341申请日: 2009-09-24
-
公开(公告)号: US07951658B2公开(公告)日: 2011-05-31
- 发明人: Keum-Nam Kim , Ul-Ho Lee
- 申请人: Keum-Nam Kim , Ul-Ho Lee
- 申请人地址: KR Yongin
- 专利权人: Samsung Mobile Display Co., Ltd.
- 当前专利权人: Samsung Mobile Display Co., Ltd.
- 当前专利权人地址: KR Yongin
- 代理机构: Christie, Parker & Hale, LLP
- 优先权: KR10-2003-0083586 20031124
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/336 ; H01L21/44 ; H01L21/4763 ; H01L21/3205
摘要:
A method for manufacturing a diode-connected transistor includes forming a silicon layer on a substrate, a first insulation film on the silicon layer, and a gate electrode on the first insulation film. The method also includes forming a source region, a channel region, and a drain region in the silicon layer and forming a second insulation film on the gate electrode. A source electrode and a drain electrode are formed on the second insulation film and are coupled to the source region and the drain region, respectively. The method further includes coupling the drain electrode to the gate electrode through a contact hole that is vertically above the channel region.
公开/授权文献
信息查询
IPC分类: