发明授权
US07951663B2 Semiconductor device and method of forming IPD structure using smooth conductive layer and bottom-side conductive layer
有权
使用平滑导电层和底侧导电层形成IPD结构的半导体器件和方法
- 专利标题： Semiconductor device and method of forming IPD structure using smooth conductive layer and bottom-side conductive layer
- 专利标题（中）： 使用平滑导电层和底侧导电层形成IPD结构的半导体器件和方法
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申请号： US12472170申请日： 2009-05-26
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公开(公告)号： US07951663B2公开(公告)日： 2011-05-31
- 发明人: Yaojian Lin
- 申请人： Yaojian Lin
- 申请人地址： SG Singapore
- 专利权人： STATS ChipPAC, Ltd.
- 当前专利权人： STATS ChipPAC, Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Patent Law Group
- 代理商 Robert D. Atkins
- 主分类号： H01L21/8244
- IPC分类号： H01L21/8244
摘要：
A semiconductor device is made by forming a smooth conductive layer over a substrate. A first insulating layer is formed over a first surface of the smooth conductive layer. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and first conductive layer. The substrate is removed. A second conductive layer is formed over a second surface of the smooth conductive layer opposite the first surface of the smooth conductive layer. A third insulating layer is formed over the second conductive layer. The second conductive layer, smooth conductive layer, first insulating layer, and first conductive layer constitute a MIM capacitor. A portion of the second conductive layer includes an inductor. The smooth conductive layer has a smooth surface to reduce particles and hill-locks which decreases ESR, increases Q factor, and increases ESD of the MIM capacitor.
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