发明授权
- 专利标题： Semiconductor device method of manfacturing a quantum well structure and a semiconductor device comprising such a quantum well structure
- 专利标题（中）： 制造量子阱结构的半导体器件方法和包括这种量子阱结构的半导体器件
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申请号： US12429348申请日： 2009-04-24
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公开(公告)号： US07951684B2公开(公告)日： 2011-05-31
- 发明人: Youri Ponomarev
- 申请人： Youri Ponomarev
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP03101982 20030702
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A semiconductor device (1) and a method are disclosed for obtaining on a substrate (2) a multilayer structure (3) with a quantum well structure (4). The quantum well structure (4) comprises a semiconductor layer (5) sandwiched by insulating layers (6,6′), wherein the material of the insulating layers (6,6′) has preferably a high dielectric constant. In a FET the quantum wells (4,9) function as channels, allowing a higher drive current and a lower off current. Short channel effects are reduced. The multi-channel FET is suitable to operate even for sub-35 nm gate lengths.In the method the quantum wells are formed by epitaxial growth of the high dielectric constant material and the semiconductor material alternately on top of each other, preferably with MBE.
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