Invention Grant
US07952914B2 Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
失效
存储器件包括具有磁性和电阻存储元件的多位存储单元和相关方法
- Patent Title: Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
- Patent Title (中): 存储器件包括具有磁性和电阻存储元件的多位存储单元和相关方法
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Application No.: US11804327Application Date: 2007-05-17
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Publication No.: US07952914B2Publication Date: 2011-05-31
- Inventor: In-Gyu Baek , Jang-Eun Lee , Se-Chung Oh , Kyung-Tae Nam , Jun-Ho Jeong
- Applicant: In-Gyu Baek , Jang-Eun Lee , Se-Chung Oh , Kyung-Tae Nam , Jun-Ho Jeong
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2007-0009475 20070130
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
An integrated circuit memory device may include an integrated circuit substrate, and a multi-bit memory cell on the integrated circuit substrate. The multi-bit memory cell may be configured to store a first bit of data by changing a first characteristic of the multi-bit memory cell and to store a second bit of data by changing a second characteristic of the multi-bit memory cell. Moreover, the first and second characteristics may be different. Related methods are also discussed.
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