A semiconductor memory apparatus includes non-inversion repeaters that non-invert data and output the inverted data; and inversion repeaters that invert data and output the inverted data. The non-inversion repeaters or the inversion repeaters are arranged on a first data line and a second data line at a predetermined distance, respectively, which are parallel with each other and the most adjacent to each other and the non-inversion repeater or the inversion repeater is arranged at first positions corresponding to the first data line and the second data line, respectively. The non-inversion repeaters are arranged on one of the first data line and the second data line while the inversion repeaters are arranged on the other first data line and the second data line, at second positions except for the first arrangement positions of positions corresponding to the first data line and the second data line, respectively.