发明授权
- 专利标题： Apparatus for fabricating a III-V nitride film
- 专利标题（中）： 用于制造III-V族氮化物膜的设备
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申请号： US10737602申请日： 2003-12-16
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公开(公告)号： US07955437B2公开(公告)日： 2011-06-07
- 发明人: Tomohiko Shibata , Yukinori Nakamura , Mitsuhiro Tanaka
- 申请人： Tomohiko Shibata , Yukinori Nakamura , Mitsuhiro Tanaka
- 申请人地址： JP Nagoya
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JP Nagoya
- 代理机构： Burr & Brown
- 优先权： JP2000-377547 20001212; JP2001-340945 20011106
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
An apparatus for fabricating a III-V nitride film by a MOCVD method, including a reactor prepared horizontally, a susceptor to hold a substrate thereon installed in the reactor, a heater to heat the substrate to a predetermined temperature via the susceptor, and a cooling mechanism to directly cool down at least the portion of the inner wall of the reactor opposite to the substrate.
公开/授权文献
- US20040132298A1 Apparatus for fabricating a III-V nitride film 公开/授权日：2004-07-08
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