发明授权
- 专利标题： Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer
- 专利标题（中）： 硅晶片的清洗方法及清洗硅晶片的装置
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申请号： US12746201申请日： 2008-11-21
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公开(公告)号： US07955440B2公开(公告)日： 2011-06-07
- 发明人: Shigeru Okuuchi , Kazushige Takaishi
- 申请人： Shigeru Okuuchi , Kazushige Takaishi
- 申请人地址： JP Tokyo
- 专利权人： Sumco Corporation
- 当前专利权人： Sumco Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Greenblum & Bernstein, P.L.C.
- 优先权： JP2007-317621 20071207
- 国际申请： PCT/JP2008/071198 WO 20081121
- 国际公布： WO2009/072406 WO 20090611
- 主分类号： C23G1/02
- IPC分类号： C23G1/02
摘要：
After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even.
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