发明授权
US07955448B2 Alloy for heat dissipation of semiconductor device and semiconductor module, and method of manufacturing alloy
有权
用于半导体器件和半导体模块的散热的合金以及合金的制造方法
- 专利标题: Alloy for heat dissipation of semiconductor device and semiconductor module, and method of manufacturing alloy
- 专利标题(中): 用于半导体器件和半导体模块的散热的合金以及合金的制造方法
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申请号: US11886973申请日: 2005-10-05
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公开(公告)号: US07955448B2公开(公告)日: 2011-06-07
- 发明人: Hoshiaki Terao , Hideaki Kobiki , Satoshi Uenosono
- 申请人: Hoshiaki Terao , Hideaki Kobiki , Satoshi Uenosono
- 申请人地址: JP Niigata-shi, Niigata JP Tokyo
- 专利权人: JFE Precision Corporation,JFE Steel Corporation
- 当前专利权人: JFE Precision Corporation,JFE Steel Corporation
- 当前专利权人地址: JP Niigata-shi, Niigata JP Tokyo
- 代理机构: Holtz, Holtz, Goodman & Chick PC
- 优先权: JP2005-119104 20050415
- 国际申请: PCT/JP2005/018741 WO 20051005
- 国际公布: WO2006/112063 WO 20061026
- 主分类号: C22C27/06
- IPC分类号: C22C27/06 ; C22C30/02
摘要:
It is an object to provide an inexpensive alloy for heat dissipation having a small thermal expansion coefficient as known composite materials, a large thermal conductivity as pure copper, and excellent machinability and a method for manufacturing the alloy. In particular, since various shapes are required of the alloy for heat dissipation, a manufacturing method by using a powder metallurgy method capable of supplying alloys for heat dissipation, the manufacturing costs of which are low and which take on various shapes, is provided besides the known melting method. The alloy according to the present invention is a Cu—Cr alloy, which is composed of 0.3 percent by mass or more, and 80 percent by mass or less of Cr and the remainder of Cu and incidental impurities and which has a structure in which particulate Cr phases having a major axis of 100 nm or less and an aspect ratio of less than 10 are precipitated at a density of 20 particles/μm2 in a Cu matrix except Cr phases of more than 100 nm.
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