发明授权
- 专利标题： Method of fabricating a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12415757申请日： 2009-03-31
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公开(公告)号： US07955873B2公开(公告)日： 2011-06-07
- 发明人: Manfred Mengel , Thomas Spoettl , Frank Pueschner
- 申请人： Manfred Mengel , Thomas Spoettl , Frank Pueschner
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of fabricating a semiconductor device is disclosed. In one embodiment, the method includes providing at least one semiconductor chip including an electrically conductive layer. A voltage is applied to an electrode. The electrode is moved over the electrically conductive layer for growing a metal layer onto the electrically conductive layer.
公开/授权文献
- US20100248475A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 公开/授权日：2010-09-30
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