发明授权
- 专利标题： Dishing-free gap-filling with multiple CMPs
- 专利标题（中）： 无间隙填充多个CMP
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申请号： US12152380申请日： 2008-05-14
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公开(公告)号： US07955964B2公开(公告)日： 2011-06-07
- 发明人: Ming-Yuan Wu , Kong-Beng Thei , Chiun-Han Yeh , Harry Chuang , Mong-Song Liang
- 申请人： Ming-Yuan Wu , Kong-Beng Thei , Chiun-Han Yeh , Harry Chuang , Mong-Song Liang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/4763
摘要：
A method of forming an integrated circuit structure includes providing a semiconductor substrate; forming patterned features over the semiconductor substrate, wherein gaps are formed between the patterned features; filling the gaps with a first filling material, wherein the first filling material has a first top surface higher than top surfaces of the patterned features; and performing a first planarization to lower the top surface of the first filling material, until the top surfaces of the patterned features are exposed. The method further includes depositing a second filling material, wherein the second filling material has a second top surface higher than the top surfaces of the patterned features; and performing a second planarization to lower the top surface of the second filling material, until the top surfaces of the patterned features are exposed.
公开/授权文献
- US20090286384A1 Dishing-free gap-filling with multiple CMPs 公开/授权日：2009-11-19
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