Invention Grant
US07955981B2 Method of making a two-terminal non-volatile memory pillar device with rounded corner
有权
制造具有圆角的双端非易失性存储柱装置的方法
- Patent Title: Method of making a two-terminal non-volatile memory pillar device with rounded corner
- Patent Title (中): 制造具有圆角的双端非易失性存储柱装置的方法
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Application No.: US12458091Application Date: 2009-06-30
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Publication No.: US07955981B2Publication Date: 2011-06-07
- Inventor: Xiying Chen , Huiwen Xu , Chuanbin Pan
- Applicant: Xiying Chen , Huiwen Xu , Chuanbin Pan
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A non-volatile memory device includes a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell containing a steering element and a storage element and at least one of a top corner or a bottom corner of each of the plurality of pillars is rounded. A method of making non-volatile memory device includes forming a stack of device layers, and patterning the stack to form a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell that contains a steering element and a storage element, and where at least one of top corner or bottom corner of each of the plurality of pillars is rounded.
Public/Granted literature
- US20100327254A1 Methods to improve electrode diffusions in two-terminal non-volatile memory devices Public/Granted day:2010-12-30
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