发明授权
- 专利标题： Method for manufacturing semiconductor device, semiconductor device, and electronic appliance
- 专利标题（中）： 半导体器件，半导体器件和电子器件的制造方法
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申请号： US12243164申请日： 2008-10-01
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公开(公告)号： US07955994B2公开(公告)日： 2011-06-07
- 发明人: Satoshi Toriumi , Noriyoshi Suzuki
- 申请人： Satoshi Toriumi , Noriyoshi Suzuki
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权： JP2007-271683 20071018
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appliance with high performance and high reliability, which uses the semiconductor device. An insulator containing nitrogen, such as silicon oxynitride or silicon nitride oxide, and an insulator containing nitrogen and fluorine, such as silicon oxynitride added with fluorine or silicon nitride oxide added with fluorine, are alternately deposited so that an insulating layer is formed. By sandwiching an insulator containing nitrogen and fluorine between insulators containing nitrogen, the insulator containing nitrogen and fluorine can be prevented from absorbing moisture and thus a dielectric strength voltage can be increased. Further, an insulator contains fluorine so that a dielectric constant can be reduced.