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US07956342B2 Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impurities 有权
用于相变随机存取存储器的相变材料，相变材料具有均匀分布的绝缘杂质

Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impurities
Abstract:
Insulating impurities may be uniformly distributed over an entire or partial region of the phase change material. The PRAM may include a phase change layer including the phase change material. The insulating impurity content of the phase change material may be 0.1 to 10% (inclusive) the volume of the phase change material. The insulating impurity content of the phase change material may be adjusted by controlling the power applied to a target including the insulating impurities.
Abstract(Chinese):

绝缘杂质可以均匀分布在相变材料的整个或部分区域上。 PRAM可以包括包括相变材料的相变层。 相变材料的绝缘杂质含量可以为相变材料体积的0.1〜10％（含）。 可以通过控制施加到包括绝缘杂质的靶的功率来调节相变材料的绝缘杂质含量。

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