发明授权
- 专利标题： Multi-layered integrated circuit and apparatus with thermal management and method
- 专利标题（中）： 具有热管理和方法的多层集成电路和设备
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申请号： US12189739申请日： 2008-08-11
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公开(公告)号： US07956381B1公开(公告)日： 2011-06-07
- 发明人: Peter D. Brewer , Keith V. Guinn , Jonathan J. Lynch
- 申请人： Peter D. Brewer , Keith V. Guinn , Jonathan J. Lynch
- 申请人地址： US CA Malibu
- 专利权人： HRL Laboratories, LLC
- 当前专利权人： HRL Laboratories, LLC
- 当前专利权人地址： US CA Malibu
- 代理机构： Christie, Parker, Hale
- 主分类号： H01L29/74
- IPC分类号： H01L29/74
摘要：
A multi-layered semiconductor apparatus capable of producing at least 500 W of continuous power includes at least two device substrates arranged in a stack. Each of the at least two device substrates has a first side and a second side opposite to the first side, and each of the at least two device substrates is configured to produce an average power density higher than 100 W/cm2. A plurality of active devices are provided on the first side of each of the at least two device substrates. The plurality of active devices are radiatively coupled among the at least two device substrates. At least one of the at least two device substrates is structured to provide a plurality of cavities on its second side to receive corresponding ones of the plurality of active devices on the first side of an adjacent one of the at least two device substrates.
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