发明授权
US07956397B2 Semiconductor device, charge pumping circuit, and semiconductor memory circuit
失效
半导体器件，电荷泵浦电路和半导体存储器电路
- 专利标题： Semiconductor device, charge pumping circuit, and semiconductor memory circuit
- 专利标题（中）： 半导体器件，电荷泵浦电路和半导体存储器电路
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申请号： US11863849申请日： 2007-09-28
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公开(公告)号： US07956397B2公开(公告)日： 2011-06-07
- 发明人: Osamu Wada , Toshimasa Namekawa
- 申请人： Osamu Wada , Toshimasa Namekawa
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-268276 20060929
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; H01L29/94 ; G05F1/10
摘要：
A semiconductor device comprising: a first well region which is formed at a surface portion of a semiconductor substrate and to which a first voltage is applied; a gate insulating film which is formed on the first well region; a gate electrode which is formed on the gate insulating film and has a polarity different from a polarity of the first well region and to which a second voltage is applied; and an element isolating region which is formed at a surface portion of the first well region to surround a region within the first well region that is opposed to the gate insulating film, wherein a capacitance is formed between the region within the first well region surrounded by the element isolating region and the gate electrode.
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