发明授权
- 专利标题： Magnetoresistive element and magnetoresistive random access memory including the same
- 专利标题（中）： 磁阻元件和包括其的磁阻随机存取存储器
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申请号： US12790171申请日： 2010-05-28
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公开(公告)号： US07957184B2公开(公告)日： 2011-06-07
- 发明人: Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- 申请人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-248251 20070925
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/00
摘要：
The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
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