发明授权
- 专利标题： Method for forming a semiconductor device using optical proximity correction for the optical lithography
- 专利标题（中）： 使用光学光刻的光学邻近校正来形成半导体器件的方法
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申请号： US12091695申请日： 2005-10-28
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公开(公告)号： US07962868B2公开(公告)日： 2011-06-14
- 发明人: Kevin Lucas , Robert Boone , Karl Wimmer , Christian Gardin
- 申请人： Kevin Lucas , Robert Boone , Karl Wimmer , Christian Gardin
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 国际申请： PCT/EP2005/013520 WO 20051028
- 国际公布： WO2007/048442 WO 20070503
- 主分类号： G06F17/50
- IPC分类号： G06F17/50 ; G06K9/00 ; G06K9/64
摘要：
A method for forming a semiconductor device includes performing a first optimization of a first edge location of a feature fragment, wherein the first optimization has a first speed per fragment, and performing a second optimization of a second edge location of the feature fragment, wherein the second optimization has a second speed per fragment that is slower than the first speed per fragment. Next, a result of the second optimization is used to form a reticle pattern; and a layer on a semiconductor wafer is patterned using the reticle pattern.
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