发明授权
- 专利标题: Micro gas sensor and method for manufacturing the same
- 专利标题(中): 微气体传感器及其制造方法
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申请号: US11951986申请日: 2007-12-06
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公开(公告)号: US07963147B2公开(公告)日: 2011-06-21
- 发明人: Chi-Hoon Jun , Sang-Choon Ko , Hyeon-Bong Pyo , Seon-Hee Park
- 申请人: Chi-Hoon Jun , Sang-Choon Ko , Hyeon-Bong Pyo , Seon-Hee Park
- 申请人地址: KR Daejon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejon
- 代理机构: Rabin & Berdo, P.C.
- 优先权: KR10-2006-0123686 20061207
- 主分类号: G01N7/00
- IPC分类号: G01N7/00 ; G01N27/12
摘要:
Provided are a micro gas sensor for measuring a gas concentration configured to achieve a high heating and cooling rate of a gas sensitive layer, achieve temperature uniformity, and achieve durability against thermal impact and mechanical impact; and a method for manufacturing the micro gas sensor. The micro gas sensor includes: a vacuum cavity disposed in a substrate; a support layer covering the vacuum cavity; a sealing layer sealing the support layer and the vacuum cavity; a micro heater disposed on the sealing layer; a plurality of electrodes disposed on the micro heater, insulated from the micro heater; and a gas sensitive layer covering the electrodes.
公开/授权文献
- US20080134753A1 MICRO GAS SENSOR AND METHOD FOR MANUFACTURING THE SAME 公开/授权日:2008-06-12
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