Invention Grant
- Patent Title: Silicon-based RF system and method of manufacturing the same
- Patent Title (中): 硅基RF系统及其制造方法
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Application No.: US12759648Application Date: 2010-04-13
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Publication No.: US07964427B2Publication Date: 2011-06-21
- Inventor: Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
- Applicant: Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR2005-11901 20050214
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.
Public/Granted literature
- US20100197064A1 SILICON-BASED RF SYSTEM AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-08-05
Information query
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