发明授权
US07964456B2 Method of fabricating polysilicon thin film and thin film transistor using polysilicon fabricated by the same method
有权
使用同样方法制造的多晶硅薄膜晶体管和多晶硅晶体管的制造方法
- 专利标题： Method of fabricating polysilicon thin film and thin film transistor using polysilicon fabricated by the same method
- 专利标题（中）： 使用同样方法制造的多晶硅薄膜晶体管和多晶硅晶体管的制造方法
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申请号： US11033493申请日： 2005-01-12
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公开(公告)号： US07964456B2公开(公告)日： 2011-06-21
- 发明人: Ramesh Kakkad
- 申请人： Ramesh Kakkad
- 申请人地址： KR Giheung-Gu, Yongin, Gyunggi-Do
- 专利权人： Samsung Mobile Display Co., Ltd.
- 当前专利权人： Samsung Mobile Display Co., Ltd.
- 当前专利权人地址： KR Giheung-Gu, Yongin, Gyunggi-Do
- 代理商 Robert E. Bushnell, Esq.
- 优先权： KR10-2004-0011146 20040219
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method of fabricating a polysilicon thin film produces a polysilicon thin film which is used to make a thin film transistor. The method includes depositing a silicon film containing amorphous silicon on a substrate, and performing thermal treatment on the silicon film at a predetermined temperature in an H2O atmosphere. Accordingly, the crystallization temperature and thermal treatment time are decreased when the amorphous silicon is crystallized by a solid phase crystallization method, and this prevents the substrate from being bent due to application of a thermal treatment process for a long time and at a high temperature. As a result of the invention, a polysilicon thin film having superior crystallization properties is obtained. Use of the polysilicon thin film in a thin film transistor results in the reduction of defects in the thin film resistor.
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