发明授权
US07964890B2 Epitaxial substrate, method of making same and method of making a semiconductor chip
有权
外延基板,其制造方法以及制造半导体芯片的方法
- 专利标题: Epitaxial substrate, method of making same and method of making a semiconductor chip
- 专利标题(中): 外延基板,其制造方法以及制造半导体芯片的方法
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申请号: US11528713申请日: 2006-09-27
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公开(公告)号: US07964890B2公开(公告)日: 2011-06-21
- 发明人: Andreas Plössl , Gertrud Kräuter , Rainer Butendeich
- 申请人: Andreas Plössl , Gertrud Kräuter , Rainer Butendeich
- 申请人地址: DE Regensburg
- 专利权人: Osram Opto Semiconductors GmbH
- 当前专利权人: Osram Opto Semiconductors GmbH
- 当前专利权人地址: DE Regensburg
- 代理机构: Fish & Richardson P.C.
- 优先权: DE102005047152 20050930
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
Proposed is an epitaxial substrate, particularly for making thin-film semiconductor chips based on III-V semiconductors, comprising a sacrificial layer that is applied to a wafer substrate and whose band gap is smaller than the band gap of the surrounding substrate, and a method of making the epitaxial substrate. Further described is a method of making a thin-film semiconductor chip, particularly an LED, wherein an epitaxial substrate is prepared, wherein at least one LED structure is grown on said epitaxial substrate and the LED structure is bonded to an acceptor substrate, and wherein the semiconductor wafer is released by at least partially destroying the sacrificial layer, and the at least one LED structure is singulated.
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