发明授权
- 专利标题： Integrated circuit system employing stress memorization transfer
- 专利标题（中）： 采用应力记忆传输的集成电路系统
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申请号： US12784156申请日： 2010-05-20
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公开(公告)号： US07964894B2公开(公告)日： 2011-06-21
- 发明人: Elgin Kiok Boone Quek , Pradeep Ramachandramurthy Yelehanka
- 申请人： Elgin Kiok Boone Quek , Pradeep Ramachandramurthy Yelehanka
- 申请人地址： SG Singapore
- 专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人地址： SG Singapore
- 代理商 Mikio Ishimaru
- 主分类号： H01L27/092
- IPC分类号： H01L27/092
摘要：
An integrated circuit system that includes: a substrate including a source/drain region defined by a spacer; a gate over the substrate; a gate dielectric between the gate and the substrate; a recrystallized region within the gate and the source/drain region; and a channel exhibiting the characteristics of stress memorization.
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