发明授权
- 专利标题： Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure
- 专利标题（中）： 平面场效应晶体管结构具有倾斜的结晶刻蚀源极/漏极凹槽和形成晶体管结构的方法
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申请号： US11873731申请日： 2007-10-17
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公开(公告)号： US07964910B2公开(公告)日： 2011-06-21
- 发明人: Thomas W. Dyer
- 申请人： Thomas W. Dyer
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Gibb I. P. Law Firm, LLC
- 代理商 Joseph Petrokaitis, Esq.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
Disclosed is a transistor that incorporates epitaxially deposited source/drain semiconductor films and a method for forming the transistor. A crystallographic etch is used to form recesses between a channel region and trench isolation regions in a silicon substrate. Each recess has a first side, having a first profile, adjacent to the channel region and a second side, having a second profile, adjacent to a trench isolation region. The crystallographic etch ensures that the second profile is angled so that all of the exposed recess surfaces comprise silicon. Thus, the recesses can be filled by epitaxial deposition without divot formation. Additional process steps can be used to ensure that the first side of the recess is formed with a different profile that enhances the desired stress in the channel region.
公开/授权文献
- US20090101942A1 PLANAR FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD 公开/授权日：2009-04-23
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