Invention Grant
- Patent Title: Semiconductor device and method of manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12125955Application Date: 2008-05-23
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Publication No.: US07964939B2Publication Date: 2011-06-21
- Inventor: Mitsuru Watanabe , Tetsuya Fukui
- Applicant: Mitsuru Watanabe , Tetsuya Fukui
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-202989 20040709
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A semiconductor device comprises: a semiconductor chip; a first frame; a solder layer which bonds the solder bonding metal layer of the semiconductor chip and the first frame; and a second frame bonded to the rear face of the semiconductor chip. The semiconductor chip includes: a semiconductor substrate; a first metal layer provided on a major surface of the semiconductor substrate and forming a Schottky junction with the semiconductor substrate; a second metal layer provided on the first metal layer and primarily composed of aluminum; a third metal layer provided on the second metal layer and primarily composed of molybdenum or titanium; and a solder bonding metal layer provided on the third metal layer and including at least a fourth metal layer which is primarily composed of nickel, iron or cobalt.
Public/Granted literature
- US20080224281A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME Public/Granted day:2008-09-18
Information query
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